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1N5619US/TR

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Description: DIODE GEN PURP 600V 1A D-5A

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Hervorheben:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
25pF @ 12V, 1MHz
Supplier Device Package:
D-5A
Reverse Recovery Time (trr):
250 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
25pF @ 12V, 1MHz
Supplier Device Package:
D-5A
Reverse Recovery Time (trr):
250 ns
Mfr:
Microchip Technology
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
SQ-MELF, A
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
1N5619US/TR
Diode 600 V 1A Oberflächenhalter D-5A