Produktdetails
Zahlungs-u. Verschiffen-Ausdrücke
Description: DIODE SIL CARB 1.7KV 122A TO247
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
40 µA @ 1700 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 60 A |
Package: |
Tube |
Series: |
SiC Schottky MPS™ |
Capacitance @ Vr, F: |
4577pF @ 1V, 1MHz |
Supplier Device Package: |
TO-247-2 |
Mfr: |
GeneSiC Semiconductor |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
TO-247-2 |
Voltage - DC Reverse (Vr) (Max): |
1700 V |
Current - Average Rectified (Io): |
122A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
GD60 |
Category: |
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes |
Product Status: |
Active |
Current - Reverse Leakage @ Vr: |
40 µA @ 1700 V |
Mounting Type: |
Through Hole |
Voltage - Forward (Vf) (Max) @ If: |
1.8 V @ 60 A |
Package: |
Tube |
Series: |
SiC Schottky MPS™ |
Capacitance @ Vr, F: |
4577pF @ 1V, 1MHz |
Supplier Device Package: |
TO-247-2 |
Mfr: |
GeneSiC Semiconductor |
Technology: |
SiC (Silicon Carbide) Schottky |
Operating Temperature - Junction: |
-55°C ~ 175°C |
Package / Case: |
TO-247-2 |
Voltage - DC Reverse (Vr) (Max): |
1700 V |
Current - Average Rectified (Io): |
122A |
Speed: |
Fast Recovery =< 500ns, > 200mA (Io) |
Base Product Number: |
GD60 |