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S4PJ-M3/87

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Description: DIODE GEN PURP 600V 4A TO277A

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Hervorheben:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 4 A
Package:
Tape & Reel (TR)
Series:
eSMP®
Capacitance @ Vr, F:
30pF @ 4V, 1MHz
Supplier Device Package:
TO-277A (SMPC)
Reverse Recovery Time (trr):
2.5 µs
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 150°C
Package / Case:
TO-277, 3-PowerDFN
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
4A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
S4P
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
10 µA @ 600 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 4 A
Package:
Tape & Reel (TR)
Series:
eSMP®
Capacitance @ Vr, F:
30pF @ 4V, 1MHz
Supplier Device Package:
TO-277A (SMPC)
Reverse Recovery Time (trr):
2.5 µs
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-55°C ~ 150°C
Package / Case:
TO-277, 3-PowerDFN
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
4A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
S4P
S4PJ-M3/87
Diode 600 V 4A Oberflächenbefestigung TO-277A (SMPC)