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C4D08120E

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Description: DIODE SIL CARB 1.2KV 24.5A TO252

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Hervorheben:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
250 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
3 V @ 2 A
Package:
Tube
Series:
Z-Rec®
Capacitance @ Vr, F:
560pF @ 0V, 1MHz
Supplier Device Package:
TO-252-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
24.5A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
C4D08120
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
250 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
3 V @ 2 A
Package:
Tube
Series:
Z-Rec®
Capacitance @ Vr, F:
560pF @ 0V, 1MHz
Supplier Device Package:
TO-252-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
24.5A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
C4D08120
C4D08120E
Diode 1200 V 24,5A Oberflächenhalter TO-252-2