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C4D10120E-TR

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Description: DIODE SIL CARB 1.2KV 33A TO252-2

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Hervorheben:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
250 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tape & Reel (TR)
Series:
Z-Rec®
Capacitance @ Vr, F:
754pF @ 0V, 1MHz
Supplier Device Package:
TO-252-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
33A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
C4D10120
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
250 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Package:
Tape & Reel (TR)
Series:
Z-Rec®
Capacitance @ Vr, F:
754pF @ 0V, 1MHz
Supplier Device Package:
TO-252-2
Reverse Recovery Time (trr):
0 ns
Mfr:
Wolfspeed, Inc.
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
33A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
C4D10120
C4D10120E-TR
Diode 1200 V 33A Oberflächenbefestigung TO-252-2